APA (7th ed.) Citation

Guo, P., Burrow, J. A., Sevison, G. A., Kwon, H., Perez, C., Hendrickson, J. R., . . . Sarangan, A. M. (2020). Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices. Applied Physics Letters, 116(13), 1. https://doi.org/10.1063/1.5142552

Chicago Style (17th ed.) Citation

Guo, Pengfei, et al. "Tungsten-doped Ge2Sb2Te5 Phase Change Material for High-speed Optical Switching Devices." Applied Physics Letters 116, no. 13 (2020): 1. https://doi.org/10.1063/1.5142552.

MLA (9th ed.) Citation

Guo, Pengfei, et al. "Tungsten-doped Ge2Sb2Te5 Phase Change Material for High-speed Optical Switching Devices." Applied Physics Letters, vol. 116, no. 13, 2020, p. 1, https://doi.org/10.1063/1.5142552.