Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device.
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| Title: | Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device. |
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| Authors: | Zhao, Zhiqian1,2, Cheng, Xiaohong1, Li, Yongliang1, liyongliang@ime.ac.cn, Zan, Ying1,2, Liu, Haoyan1,2, Wang, Guilei1, Du, Anyan1, Li, Junjie1,2, Zhang, Qingzhu1, Xu, Gaobo1, Ma, Xueli1, Wang, Xiaolei1, Yang, Hong1, Xu, Jing1, xujing@ime.ac.cn, Luo, Jun1,2, Li, JunFeng1, Yin, Huaxiang1, Wang, Wenwu1, wangwenwu@ime.ac.cn |
| Source: | Journal of Materials Science: Materials in Electronics; Apr2020, Vol. 31 Issue 8, p5854-5860, 7p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-019-02661-7 |
