APA (7th ed.) Citation

Zhao, Z., Cheng, X., Li, Y., Zan, Y., Liu, H., Wang, G., . . . Wang, W. (2020). Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device. Journal of Materials Science: Materials in Electronics, 31(8), 5854. https://doi.org/10.1007/s10854-019-02661-7

Chicago Style (17th ed.) Citation

Zhao, Zhiqian, et al. "Investigation on the Formation Technique of SiGe Fin for the High Mobility Channel FinFET Device." Journal of Materials Science: Materials in Electronics 31, no. 8 (2020): 5854. https://doi.org/10.1007/s10854-019-02661-7.

MLA (9th ed.) Citation

Zhao, Zhiqian, et al. "Investigation on the Formation Technique of SiGe Fin for the High Mobility Channel FinFET Device." Journal of Materials Science: Materials in Electronics, vol. 31, no. 8, 2020, p. 5854, https://doi.org/10.1007/s10854-019-02661-7.