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Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device.

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Title: Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device.
Authors: Zhao, Zhiqian1,2, Cheng, Xiaohong1, Li, Yongliang1, liyongliang@ime.ac.cn, Zan, Ying1,2, Liu, Haoyan1,2, Wang, Guilei1, Du, Anyan1, Li, Junjie1,2, Zhang, Qingzhu1, Xu, Gaobo1, Ma, Xueli1, Wang, Xiaolei1, Yang, Hong1, Xu, Jing1, xujing@ime.ac.cn, Luo, Jun1,2, Li, JunFeng1, Yin, Huaxiang1, Wang, Wenwu1, wangwenwu@ime.ac.cn
Source: Journal of Materials Science: Materials in Electronics; Apr2020, Vol. 31 Issue 8, p5854-5860, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 142685204
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Group: Ti
  Data: Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device.
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  Data: <searchLink fieldCode="AU" term="%22Zhao%2C+Zhiqian%22">Zhao, Zhiqian</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Cheng%2C+Xiaohong%22">Cheng, Xiaohong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Yongliang%22">Li, Yongliang</searchLink><relatesTo>1</relatesTo>, <i>liyongliang@ime.ac.cn</i><br /><searchLink fieldCode="AU" term="%22Zan%2C+Ying%22">Zan, Ying</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Haoyan%22">Liu, Haoyan</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Guilei%22">Wang, Guilei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Du%2C+Anyan%22">Du, Anyan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Junjie%22">Li, Junjie</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Qingzhu%22">Zhang, Qingzhu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Xu%2C+Gaobo%22">Xu, Gaobo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ma%2C+Xueli%22">Ma, Xueli</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Xiaolei%22">Wang, Xiaolei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yang%2C+Hong%22">Yang, Hong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Xu%2C+Jing%22">Xu, Jing</searchLink><relatesTo>1</relatesTo>, <i>xujing@ime.ac.cn</i><br /><searchLink fieldCode="AU" term="%22Luo%2C+Jun%22">Luo, Jun</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+JunFeng%22">Li, JunFeng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yin%2C+Huaxiang%22">Yin, Huaxiang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Wenwu%22">Wang, Wenwu</searchLink><relatesTo>1</relatesTo>, <i>wangwenwu@ime.ac.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Apr2020, Vol. 31 Issue 8, p5854-5860, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=142685204
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-019-02661-7
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 5854
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      – TitleFull: Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device.
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            – D: 15
              M: 04
              Text: Apr2020
              Type: published
              Y: 2020
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              Value: 31
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              Value: 8
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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