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Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire.

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Bibliographic Details
Title: Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire.
Authors: Lay, S.1, sabine.lay@simap.grenoble-inp.fr, Mercier, F.1, Boichot, R.1, Giusti, G.2, Pons, M.1, Blanquet, E.1
Source: Journal of Materials Science; Aug2020, Vol. 55 Issue 22, p9152-9162, 11p, 6 Diagrams, 4 Graphs
Database: Applied Science & Technology Source
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Description
ISSN:00222461
DOI:10.1007/s10853-019-04240-x