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Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire.

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Title: Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire.
Authors: Lay, S.1, sabine.lay@simap.grenoble-inp.fr, Mercier, F.1, Boichot, R.1, Giusti, G.2, Pons, M.1, Blanquet, E.1
Source: Journal of Materials Science; Aug2020, Vol. 55 Issue 22, p9152-9162, 11p, 6 Diagrams, 4 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 143301959
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire.
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      – Type: doi
        Value: 10.1007/s10853-019-04240-x
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 9152
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      – TitleFull: Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire.
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            NameFull: Lay, S.
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            NameFull: Mercier, F.
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            NameFull: Giusti, G.
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            NameFull: Pons, M.
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            – D: 01
              M: 08
              Text: Aug2020
              Type: published
              Y: 2020
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