Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device.

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Bibliographic Details
Title: Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device.
Authors: Su, Po-Cheng1, Jiang, Cheng-Min1, Chen, Yu-Jia1, Wang, Chih-Chieh1, Li, Kai-Shin2, Lin, Chao-Cheng2, Wang, Tahui1, twang@cc.nctu.edu.tw
Source: IEEE Transactions on Electron Devices; Jan2020, Vol. 67 Issue 1, p113-117, 5p
Database: Applied Science & Technology Source
Description
ISSN:00189383
DOI:10.1109/TED.2019.2953781