Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device.

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Title: Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device.
Authors: Su, Po-Cheng1, Jiang, Cheng-Min1, Chen, Yu-Jia1, Wang, Chih-Chieh1, Li, Kai-Shin2, Lin, Chao-Cheng2, Wang, Tahui1, twang@cc.nctu.edu.tw
Source: IEEE Transactions on Electron Devices; Jan2020, Vol. 67 Issue 1, p113-117, 5p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 143315699
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  Data: Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device.
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/TED.2019.2953781
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      – Code: eng
        Text: English
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        PageCount: 5
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      – TitleFull: Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device.
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            NameFull: Su, Po-Cheng
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            NameFull: Li, Kai-Shin
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            – D: 01
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              Text: Jan2020
              Type: published
              Y: 2020
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