SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition.
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| Title: | SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition. |
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| Authors: | Hsu, Yu-Lin1, Chang, Yao-Feng2, Chung, Wei-Min1, Chen, Ying-Chen3, Lin, Chao-Cheng4, Leu, Jihperng1, jimleu@mail.nctu.edu.tw |
| Source: | Applied Physics Letters; 5/26/2020, Vol. 116 Issue 21, p1-5, 5p, 1 Diagram, 1 Chart, 3 Graphs |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/5.0011192 |
