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SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition.

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Title: SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition.
Authors: Hsu, Yu-Lin1, Chang, Yao-Feng2, Chung, Wei-Min1, Chen, Ying-Chen3, Lin, Chao-Cheng4, Leu, Jihperng1, jimleu@mail.nctu.edu.tw
Source: Applied Physics Letters; 5/26/2020, Vol. 116 Issue 21, p1-5, 5p, 1 Diagram, 1 Chart, 3 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 143522594
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 5/26/2020, Vol. 116 Issue 21, p1-5, 5p, 1 Diagram, 1 Chart, 3 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=143522594
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        Value: 10.1063/5.0011192
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        Text: English
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              Text: 5/26/2020
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              Y: 2020
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