Spin-Dependent Tunneling of Holes in Heterostructures Based on GaMnAs Semiconductor: Effects of Temperature and Quantum Size.

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Bibliographic Details
Title: Spin-Dependent Tunneling of Holes in Heterostructures Based on GaMnAs Semiconductor: Effects of Temperature and Quantum Size.
Authors: Al-Shameri, Najla S.1,2, Dakhlaoui, Hassen1,2, hbaldkhlaen@iau.edu.sa, Almansour, Shaffa1,2, Alnaim, Ibtessam1,2
Source: Journal of Superconductivity & Novel Magnetism; Jul2020, Vol. 33 Issue 7, p2143-2148, 6p
Database: Applied Science & Technology Source
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ISSN:15571939
DOI:10.1007/s10948-020-05463-9