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Spin-Dependent Tunneling of Holes in Heterostructures Based on GaMnAs Semiconductor: Effects of Temperature and Quantum Size.

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Title: Spin-Dependent Tunneling of Holes in Heterostructures Based on GaMnAs Semiconductor: Effects of Temperature and Quantum Size.
Authors: Al-Shameri, Najla S.1,2, Dakhlaoui, Hassen1,2, hbaldkhlaen@iau.edu.sa, Almansour, Shaffa1,2, Alnaim, Ibtessam1,2
Source: Journal of Superconductivity & Novel Magnetism; Jul2020, Vol. 33 Issue 7, p2143-2148, 6p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 144296155
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  Data: Spin-Dependent Tunneling of Holes in Heterostructures Based on GaMnAs Semiconductor: Effects of Temperature and Quantum Size.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Superconductivity+%26+Novel+Magnetism%22">Journal of Superconductivity & Novel Magnetism</searchLink>; Jul2020, Vol. 33 Issue 7, p2143-2148, 6p
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        Value: 10.1007/s10948-020-05463-9
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      – Code: eng
        Text: English
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      – TitleFull: Spin-Dependent Tunneling of Holes in Heterostructures Based on GaMnAs Semiconductor: Effects of Temperature and Quantum Size.
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              Text: Jul2020
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