High-power InGaN light emitting diodes grown by molecular beam epitaxy.
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| Title: | High-power InGaN light emitting diodes grown by molecular beam epitaxy. |
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| Authors: | Johnson, K.1, Bousquet, V.1, Hooper, S. E.1, Kauer, M.1, Zellweger, C.1, Heffernan, J.1, jonathan.heffernan@sharp.co.uk |
| Source: | Electronics Letters (Institution of Engineering & Technology); 9/30/2004, Vol. 40 Issue 20, p1299-1300, 2p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00135194 |
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| DOI: | 10.1049/el:20046144 |
