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High-power InGaN light emitting diodes grown by molecular beam epitaxy.

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Title: High-power InGaN light emitting diodes grown by molecular beam epitaxy.
Authors: Johnson, K.1, Bousquet, V.1, Hooper, S. E.1, Kauer, M.1, Zellweger, C.1, Heffernan, J.1, jonathan.heffernan@sharp.co.uk
Source: Electronics Letters (Institution of Engineering & Technology); 9/30/2004, Vol. 40 Issue 20, p1299-1300, 2p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 14676927
AccessLevel: 2
PubType: Academic Journal
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        Value: 10.1049/el:20046144
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        Text: English
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      – TitleFull: High-power InGaN light emitting diodes grown by molecular beam epitaxy.
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              Text: 9/30/2004
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              Y: 2004
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