Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data.
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| Title: | Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data. |
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| Authors: | Saha, Bishwadeep1, bishwadeep.saha@ims-bordeaux.fr, Fregonese, Sebastien2, Heinemann, Bernd3, Scheer, Patrick4, Chevalier, Pascal4, Aufinger, Klaus5, Chakravorty, Anjan6, Zimmer, Thomas2 |
| Source: | IEEE Electron Device Letters; Jan2021, Vol. 42 Issue 1, p14-17, 4p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 148071887 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=148071887 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2020.3040891 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 14 Titles: – TitleFull: Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Saha, Bishwadeep – PersonEntity: Name: NameFull: Fregonese, Sebastien – PersonEntity: Name: NameFull: Heinemann, Bernd – PersonEntity: Name: NameFull: Scheer, Patrick – PersonEntity: Name: NameFull: Chevalier, Pascal – PersonEntity: Name: NameFull: Aufinger, Klaus – PersonEntity: Name: NameFull: Chakravorty, Anjan – PersonEntity: Name: NameFull: Zimmer, Thomas IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan2021 Type: published Y: 2021 Identifiers: – Type: issn-print Value: 07413106 Numbering: – Type: volume Value: 42 – Type: issue Value: 1 Titles: – TitleFull: IEEE Electron Device Letters Type: main |
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