Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data.

Saved in:
Bibliographic Details
Title: Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data.
Authors: Saha, Bishwadeep1, bishwadeep.saha@ims-bordeaux.fr, Fregonese, Sebastien2, Heinemann, Bernd3, Scheer, Patrick4, Chevalier, Pascal4, Aufinger, Klaus5, Chakravorty, Anjan6, Zimmer, Thomas2
Source: IEEE Electron Device Letters; Jan2021, Vol. 42 Issue 1, p14-17, 4p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2020.3040891