Bibliographic Details
| Title: |
Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates. |
| Authors: |
Polyakov, Alexander Y.1, Nikolaev, Vladimir I.2,3, Tarelkin, Sergey A.1,4,5, Pechnikov, Alexei I.2,3, Stepanov, Sergey I.2,3, Nikolaev, Andrey E.3, Shchemerov, Ivan V.1, Yakimov, Eugene B.1,6, Luparev, Nikolay V.4,5, Kuznetsov, Mikhail S.4, Vasilev, Anton A.1, Kochkova, Anastasiya I.1, Voronova, Marina I.1, Scheglov, Mikhail P.3, Kim, Jihyun7, Pearton, Stephen J.8, spear@mse.ufl.edu |
| Source: |
Journal of Applied Physics; 5/14/2021, Vol. 129 Issue 18, p1-10, 10p |
| Database: |
Applied Science & Technology Source |
