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Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates.

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Title: Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates.
Authors: Polyakov, Alexander Y.1, Nikolaev, Vladimir I.2,3, Tarelkin, Sergey A.1,4,5, Pechnikov, Alexei I.2,3, Stepanov, Sergey I.2,3, Nikolaev, Andrey E.3, Shchemerov, Ivan V.1, Yakimov, Eugene B.1,6, Luparev, Nikolay V.4,5, Kuznetsov, Mikhail S.4, Vasilev, Anton A.1, Kochkova, Anastasiya I.1, Voronova, Marina I.1, Scheglov, Mikhail P.3, Kim, Jihyun7, Pearton, Stephen J.8, spear@mse.ufl.edu
Source: Journal of Applied Physics; 5/14/2021, Vol. 129 Issue 18, p1-10, 10p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 150294702
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 5/14/2021, Vol. 129 Issue 18, p1-10, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=150294702
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        Value: 10.1063/5.0044531
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              Text: 5/14/2021
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