Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors.
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| Title: | Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors. |
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| Authors: | Sharbati, Samaneh1, sharbati@sdu.dk, Gharibshahian, Iman2, Ebel, Thomas1, Orouji, Ali A.2, Franke, Wulf-Toke1 |
| Source: | Journal of Electronic Materials; Jul2021, Vol. 50 Issue 7, p3923-3929, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 03615235 |
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| DOI: | 10.1007/s11664-021-08842-7 |
