APA (7th ed.) Citation

Sharbati, S., Gharibshahian, I., Ebel, T., Orouji, A. A., & Franke, W. (2021). Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors. Journal of Electronic Materials, 50(7), 3923. https://doi.org/10.1007/s11664-021-08842-7

Chicago Style (17th ed.) Citation

Sharbati, Samaneh, Iman Gharibshahian, Thomas Ebel, Ali A. Orouji, and Wulf-Toke Franke. "Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors." Journal of Electronic Materials 50, no. 7 (2021): 3923. https://doi.org/10.1007/s11664-021-08842-7.

MLA (9th ed.) Citation

Sharbati, Samaneh, et al. "Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors." Journal of Electronic Materials, vol. 50, no. 7, 2021, p. 3923, https://doi.org/10.1007/s11664-021-08842-7.