Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices.

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Bibliographic Details
Title:	Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices.
Authors:	Humood, Khaled¹, Saylan, Sueda¹, Mohammad, Baker¹, baker.mohammad@ku.ac.ae, Abi Jaoude, Maguy²
Source:	Journal of Electronic Materials; Aug2021, Vol. 50 Issue 8, p4397-4406, 10p
Database:	Applied Science & Technology Source

Description
ISSN:	03615235
DOI:	10.1007/s11664-021-08995-5