APA (7th ed.) Citation

Humood, K., Saylan, S., Mohammad, B., & Abi Jaoude, M. (2021). Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices. Journal of Electronic Materials, 50(8), 4397. https://doi.org/10.1007/s11664-021-08995-5

Chicago Style (17th ed.) Citation

Humood, Khaled, Sueda Saylan, Baker Mohammad, and Maguy Abi Jaoude. "Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices." Journal of Electronic Materials 50, no. 8 (2021): 4397. https://doi.org/10.1007/s11664-021-08995-5.

MLA (9th ed.) Citation

Humood, Khaled, et al. "Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices." Journal of Electronic Materials, vol. 50, no. 8, 2021, p. 4397, https://doi.org/10.1007/s11664-021-08995-5.