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Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices.

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Title: Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices.
Authors: Humood, Khaled1, Saylan, Sueda1, Mohammad, Baker1, baker.mohammad@ku.ac.ae, Abi Jaoude, Maguy2
Source: Journal of Electronic Materials; Aug2021, Vol. 50 Issue 8, p4397-4406, 10p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices.
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      – Type: doi
        Value: 10.1007/s11664-021-08995-5
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      – Code: eng
        Text: English
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        StartPage: 4397
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      – TitleFull: Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices.
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            NameFull: Humood, Khaled
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            NameFull: Saylan, Sueda
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              Text: Aug2021
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              Y: 2021
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              Value: 50
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              Value: 8
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