Bibliographic Details
| Title: |
Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing. |
| Authors: |
Kim, Si Joon1,2, sijoon.kim@kangwon.ac.kr, Jung, Yong Chan3, Mohan, Jaidah3, Kim, Hyo Jeong1,2, Rho, Sung Min4, Kim, Min Seong4, Yoo, Jeong Gyu1, Park, Hye Ryeon1, Hernandez-Arriaga, Heber3, Kim, Jin-Hyun3, Kim, Hyung Tae4, Choi, Dong Hyun4, Jung, Joohye4, Hwang, Su Min3, Sejoon Kim, Harrison3, Kim, Hyun Jae4, hjk3@yonsei.ac.kr, Kim, Jiyoung3, jiyoung.kim@utdallas.edu |
| Source: |
Applied Physics Letters; 12/13/2021, Vol. 119 Issue 24, p1-5, 5p |
| Database: |
Applied Science & Technology Source |
