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Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing.

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Title: Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing.
Authors: Kim, Si Joon1,2, sijoon.kim@kangwon.ac.kr, Jung, Yong Chan3, Mohan, Jaidah3, Kim, Hyo Jeong1,2, Rho, Sung Min4, Kim, Min Seong4, Yoo, Jeong Gyu1, Park, Hye Ryeon1, Hernandez-Arriaga, Heber3, Kim, Jin-Hyun3, Kim, Hyung Tae4, Choi, Dong Hyun4, Jung, Joohye4, Hwang, Su Min3, Sejoon Kim, Harrison3, Kim, Hyun Jae4, hjk3@yonsei.ac.kr, Kim, Jiyoung3, jiyoung.kim@utdallas.edu
Source: Applied Physics Letters; 12/13/2021, Vol. 119 Issue 24, p1-5, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 154194412
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 12/13/2021, Vol. 119 Issue 24, p1-5, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=154194412
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        Value: 10.1063/5.0075466
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              Text: 12/13/2021
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