View in EDS HTML Full Text PDF Full Text

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.

Saved in:
Bibliographic Details
Title: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.
Authors: He, Wei1, Li, Jian1, Liao, Zeliang1, Lin, Feng1, Wu, Junye1, Wang, Bing1, Wang, Maojun2, Liu, Nan3, Chiu, Hsien-Chin4, Kuo, Hao-Chung5, Lin, Xinnan6, Li, Jingbo7, Liu, Xinke1, xkliu@szu.edu.cn
Source: Nanoscale Research Letters; 1/15/2022, Vol. 17 Issue 1, p1-10, 10p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Description
ISSN:19317573
DOI:10.1186/s11671-022-03653-z