APA (7th ed.) Citation

He, W., Li, J., Liao, Z., Lin, F., Wu, J., Wang, B., . . . Liu, X. (2022). 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer. Nanoscale Research Letters, 17(1), 1. https://doi.org/10.1186/s11671-022-03653-z

Chicago Style (17th ed.) Citation

He, Wei, et al. "1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer." Nanoscale Research Letters 17, no. 1 (2022): 1. https://doi.org/10.1186/s11671-022-03653-z.

MLA (9th ed.) Citation

He, Wei, et al. "1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer." Nanoscale Research Letters, vol. 17, no. 1, 2022, p. 1, https://doi.org/10.1186/s11671-022-03653-z.