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1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.

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Title: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.
Authors: He, Wei1, Li, Jian1, Liao, Zeliang1, Lin, Feng1, Wu, Junye1, Wang, Bing1, Wang, Maojun2, Liu, Nan3, Chiu, Hsien-Chin4, Kuo, Hao-Chung5, Lin, Xinnan6, Li, Jingbo7, Liu, Xinke1, xkliu@szu.edu.cn
Source: Nanoscale Research Letters; 1/15/2022, Vol. 17 Issue 1, p1-10, 10p
Database: Applied Science & Technology Source
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  Data: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.
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              Text: 1/15/2022
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