Low-Temperature Direct Bonding of SiC to Si via Plasma Activation.
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| Title: | Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. |
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| Authors: | Wang, Fengxuan1,2, wangfengxuan@semi.ac.cnxyang@semi.ac.cn, Yang, Xiang2, yqzhao@semi.ac.cn, Zhao, Yongqiang2,3, fhyang@semi.ac.cnwujingmin@semi.ac.cn, Wu, Jingmin2,3, gzy@semi.ac.cn, Guo, Zhiyu2,3, He, Zhi4, hezhi@ime.ac.cn, Fan, Zhongchao1,2, hezhi@ime.ac.cn, Yang, Fuhua3 |
| Source: | Applied Sciences (2076-3417); Apr2022, Vol. 12 Issue 7, p3261-3261, 9p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 20763417 |
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| DOI: | 10.3390/app12073261 |
