APA (7th ed.) Citation

Wang, F., Yang, X., Zhao, Y., Wu, J., Guo, Z., He, Z., . . . Yang, F. (2022). Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Applied Sciences (2076-3417), 12(7), 3261. https://doi.org/10.3390/app12073261

Chicago Style (17th ed.) Citation

Wang, Fengxuan, Xiang Yang, Yongqiang Zhao, Jingmin Wu, Zhiyu Guo, Zhi He, Zhongchao Fan, and Fuhua Yang. "Low-Temperature Direct Bonding of SiC to Si via Plasma Activation." Applied Sciences (2076-3417) 12, no. 7 (2022): 3261. https://doi.org/10.3390/app12073261.

MLA (9th ed.) Citation

Wang, Fengxuan, et al. "Low-Temperature Direct Bonding of SiC to Si via Plasma Activation." Applied Sciences (2076-3417), vol. 12, no. 7, 2022, p. 3261, https://doi.org/10.3390/app12073261.