Low-Temperature Direct Bonding of SiC to Si via Plasma Activation.
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| Title: | Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. |
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| Authors: | Wang, Fengxuan1,2, wangfengxuan@semi.ac.cnxyang@semi.ac.cn, Yang, Xiang2, yqzhao@semi.ac.cn, Zhao, Yongqiang2,3, fhyang@semi.ac.cnwujingmin@semi.ac.cn, Wu, Jingmin2,3, gzy@semi.ac.cn, Guo, Zhiyu2,3, He, Zhi4, hezhi@ime.ac.cn, Fan, Zhongchao1,2, hezhi@ime.ac.cn, Yang, Fuhua3 |
| Source: | Applied Sciences (2076-3417); Apr2022, Vol. 12 Issue 7, p3261-3261, 9p |
| Database: | Applied Science & Technology Source |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 156248765 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Wang%2C+Fengxuan%22">Wang, Fengxuan</searchLink><relatesTo>1,2</relatesTo>, <i>wangfengxuan@semi.ac.cnxyang@semi.ac.cn</i><br /><searchLink fieldCode="AU" term="%22Yang%2C+Xiang%22">Yang, Xiang</searchLink><relatesTo>2</relatesTo>, <i>yqzhao@semi.ac.cn</i><br /><searchLink fieldCode="AU" term="%22Zhao%2C+Yongqiang%22">Zhao, Yongqiang</searchLink><relatesTo>2,3</relatesTo>, <i>fhyang@semi.ac.cnwujingmin@semi.ac.cn</i><br /><searchLink fieldCode="AU" term="%22Wu%2C+Jingmin%22">Wu, Jingmin</searchLink><relatesTo>2,3</relatesTo>, <i>gzy@semi.ac.cn</i><br /><searchLink fieldCode="AU" term="%22Guo%2C+Zhiyu%22">Guo, Zhiyu</searchLink><relatesTo>2,3</relatesTo><br /><searchLink fieldCode="AU" term="%22He%2C+Zhi%22">He, Zhi</searchLink><relatesTo>4</relatesTo>, <i>hezhi@ime.ac.cn</i><br /><searchLink fieldCode="AU" term="%22Fan%2C+Zhongchao%22">Fan, Zhongchao</searchLink><relatesTo>1,2</relatesTo>, <i>hezhi@ime.ac.cn</i><br /><searchLink fieldCode="AU" term="%22Yang%2C+Fuhua%22">Yang, Fuhua</searchLink><relatesTo>3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Sciences+%282076-3417%29%22">Applied Sciences (2076-3417)</searchLink>; Apr2022, Vol. 12 Issue 7, p3261-3261, 9p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=156248765 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/app12073261 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 3261 Titles: – TitleFull: Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Wang, Fengxuan – PersonEntity: Name: NameFull: Yang, Xiang – PersonEntity: Name: NameFull: Zhao, Yongqiang – PersonEntity: Name: NameFull: Wu, Jingmin – PersonEntity: Name: NameFull: Guo, Zhiyu – PersonEntity: Name: NameFull: He, Zhi – PersonEntity: Name: NameFull: Fan, Zhongchao – PersonEntity: Name: NameFull: Yang, Fuhua IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2022 Type: published Y: 2022 Identifiers: – Type: issn-print Value: 20763417 Numbering: – Type: volume Value: 12 – Type: issue Value: 7 Titles: – TitleFull: Applied Sciences (2076-3417) Type: main |
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