Recrystallization of thick implanted GeSn layers with nanosecond laser annealing.

Saved in:
Bibliographic Details
Title: Recrystallization of thick implanted GeSn layers with nanosecond laser annealing.
Authors: Casiez, L.1, Bernier, N.1, Chrétien, J.2, Richy, J.1, Rouchon, D.1, Bertrand, M.1, Mazen, F.1, Frauenrath, M.1, Chelnokov, A.1, Hartmann, J. M.1, Calvo, V.2, Pauc, N.2, Reboud, V.1, vincent.reboud@cea.fr, Acosta Alba, P.1
Source: Journal of Applied Physics; 4/21/2022, Vol. 131 Issue 15, p1-13, 13p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/5.0085107