Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.
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| Title: | Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors. |
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| Authors: | Zhang, Qing1, Xiong, Hao1, Wang, Qiangfei1, Xu, Liping1, Deng, Menghan1, Zhang, Jinzhong1, jzzhang@ee.ecnu.edu.cn, Fuchs, Dirk2, Li, Wenwu1, Shang, Liyan1, Li, Yawei1, Hu, Zhigao1,3,4, Chu, Junhao1,3,4 |
| Source: | Advanced Electronic Materials; May2022, Vol. 8 Issue 5, p1-7, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 2199160X |
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| DOI: | 10.1002/aelm.202101189 |
