Band gap engineering to stimulate the optoelectronic performance of lead-free halide perovskites RbGeX3 (X = Cl, Br) under pressure.
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| Title: | Band gap engineering to stimulate the optoelectronic performance of lead-free halide perovskites RbGeX3 (X = Cl, Br) under pressure. |
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| Authors: | Mitro, S. K.1, Saiduzzaman, Md2, msaiduzzaman@mse.kuet.ac.bd, Asif, Tariqul Islam2, Hossain, Khandaker Monower3, monower37@gmail.com |
| Source: | Journal of Materials Science: Materials in Electronics; Jun2022, Vol. 33 Issue 17, p13860-13875, 16p |
| Database: | Applied Science & Technology Source |
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