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Band gap engineering to stimulate the optoelectronic performance of lead-free halide perovskites RbGeX3 (X = Cl, Br) under pressure.

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Bibliographic Details
Title: Band gap engineering to stimulate the optoelectronic performance of lead-free halide perovskites RbGeX3 (X = Cl, Br) under pressure.
Authors: Mitro, S. K.1, Saiduzzaman, Md2, msaiduzzaman@mse.kuet.ac.bd, Asif, Tariqul Islam2, Hossain, Khandaker Monower3, monower37@gmail.com
Source: Journal of Materials Science: Materials in Electronics; Jun2022, Vol. 33 Issue 17, p13860-13875, 16p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-022-08318-2