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Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform.

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Title: Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform.
Authors: Lin, Cheng‐Ming1, Hsu, Chuang‐Han1, Huang, Wei‐Yu2, Astié, Vincent3, Cheng, Po‐Hsien1, Lin, Yue‐Min1, Hu, Wei‐Shan1, Chen, Szu‐Hua1, Lin, Han‐Yu1, Li, Ming‐Yang1, Magyari‐Kope, Blanka1, Yang, Chi‐Ming1, Decams, Jean‐Manuel3, Lee, Tzu‐Lih1, Gui, Dong1, Wang, Han1, Woon, Wei‐Yen1,2, wywoon@phy.ncu.edu.tw, Lin, Pinyen1, Wu, Jeff1, Lee, Jang‐Jung1
Source: Advanced Materials Technologies; Oct2022, Vol. 7 Issue 10, p1-8, 8p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 159630656
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Materials+Technologies%22">Advanced Materials Technologies</searchLink>; Oct2022, Vol. 7 Issue 10, p1-8, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=159630656
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              Text: Oct2022
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