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Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering.

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Bibliographic Details
Title: Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering.
Authors: Chakravorty, Anusmita1, Boulle, Alexandre2, Debelle, Aurélien3, Monnet, Isabelle4, Manna, Gouranga5, Saha, Pinku6, Mukhopadhyay, Mrinmay Kumar7, Kabiraj, Debdulal1, kabiraj@iuac.res.in
Source: Journal of Materials Science; Nov2022, Vol. 57 Issue 43, p20309-20319, 11p, 1 Black and White Photograph, 5 Graphs
Database: Applied Science & Technology Source
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ISSN:00222461
DOI:10.1007/s10853-022-07876-4