View in EDS HTML Full Text PDF Full Text

Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO 2 /Si Substrate: A Joint Experimental and Theoretical Study.

Saved in:
Bibliographic Details
Title: Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO 2 /Si Substrate: A Joint Experimental and Theoretical Study.
Authors: Borisenko, Denis Petrovich1, dpborisenko@mephi.ru, Gusev, Alexander Sergeevich1, dpborisenko@mephi.ru, Kargin, Nikolay Ivanovich1, Dobrokhotov, Petr Leonidovich1, Timofeev, Alexey Afanasievich1, Labunov, Vladimir Arkhipovich1,2, Mikhalik, Mikhail Mikhailovich2, Katin, Konstantin Petrovich1, dpborisenko@mephi.ru, Maslov, Mikhail Mikhailovich1, Dzhumaev, Pavel Sergeevich1, Komissarov, Ivan Vladimirovich2
Source: Applied Sciences (2076-3417); Nov2022, Vol. 12 Issue 22, p11516, 17p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Description
ISSN:20763417
DOI:10.3390/app122211516