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Engineering the resistive switching properties of 2D WS2 memristor: role of band gap.

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Bibliographic Details
Title: Engineering the resistive switching properties of 2D WS2 memristor: role of band gap.
Authors: Cao, Qing1, Zou, Pengfei1, Li, Pengcheng2, Xiong, Limiao1, Bi, Hailin1, Wu, Jun1, wujun@hfut.edu.cn
Source: Journal of Materials Science: Materials in Electronics; Jan2023, Vol. 34 Issue 3, p1-9, 9p
Database: Applied Science & Technology Source
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Description
ISSN:09574522
DOI:10.1007/s10854-022-09612-9