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Engineering the resistive switching properties of 2D WS2 memristor: role of band gap.

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Title: Engineering the resistive switching properties of 2D WS2 memristor: role of band gap.
Authors: Cao, Qing1, Zou, Pengfei1, Li, Pengcheng2, Xiong, Limiao1, Bi, Hailin1, Wu, Jun1, wujun@hfut.edu.cn
Source: Journal of Materials Science: Materials in Electronics; Jan2023, Vol. 34 Issue 3, p1-9, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 161418804
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Engineering the resistive switching properties of 2D WS2 memristor: role of band gap.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jan2023, Vol. 34 Issue 3, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=161418804
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      – Type: doi
        Value: 10.1007/s10854-022-09612-9
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      – Code: eng
        Text: English
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        PageCount: 9
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      – TitleFull: Engineering the resistive switching properties of 2D WS2 memristor: role of band gap.
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            NameFull: Cao, Qing
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            NameFull: Zou, Pengfei
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            NameFull: Li, Pengcheng
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            NameFull: Xiong, Limiao
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            NameFull: Bi, Hailin
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            – D: 20
              M: 01
              Text: Jan2023
              Type: published
              Y: 2023
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              Value: 34
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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