Raman strain–shift measurements and prediction from first-principles in highly strained silicon.
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| Title: | Raman strain–shift measurements and prediction from first-principles in highly strained silicon. |
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| Authors: | Roisin, Nicolas1, nicolas.roisin@uclouvain.be, Colla, Marie-Stéphane2, Raskin, Jean-Pierre1, Flandre, Denis1 |
| Source: | Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-10, 10p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-022-09769-3 |
