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Raman strain–shift measurements and prediction from first-principles in highly strained silicon.

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Title: Raman strain–shift measurements and prediction from first-principles in highly strained silicon.
Authors: Roisin, Nicolas1, nicolas.roisin@uclouvain.be, Colla, Marie-Stéphane2, Raskin, Jean-Pierre1, Flandre, Denis1
Source: Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-10, 10p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 161691518
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  Data: Raman strain–shift measurements and prediction from first-principles in highly strained silicon.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Feb2023, Vol. 34 Issue 5, p1-10, 10p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-022-09769-3
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      – Code: eng
        Text: English
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        PageCount: 10
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      – TitleFull: Raman strain–shift measurements and prediction from first-principles in highly strained silicon.
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            NameFull: Roisin, Nicolas
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            NameFull: Colla, Marie-Stéphane
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            NameFull: Raskin, Jean-Pierre
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            – D: 15
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              Text: Feb2023
              Type: published
              Y: 2023
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              Value: 34
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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