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Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures.

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Bibliographic Details
Title: Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures.
Authors: Laifi, J.1, jlaifi@ju.edu.sa, Bchetnia, A.2, Al-Hweiriny, Asma Abdullah2, Esaahli, Fatma Hfaiedh2
Source: Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-9, 9p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-022-09744-y