APA (7th ed.) Citation

Laifi, J., Bchetnia, A., Al-Hweiriny, A. A., & Esaahli, F. H. (2023). Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures. Journal of Materials Science: Materials in Electronics, 34(5), 1. https://doi.org/10.1007/s10854-022-09744-y

Chicago Style (17th ed.) Citation

Laifi, J., A. Bchetnia, Asma Abdullah Al-Hweiriny, and Fatma Hfaiedh Esaahli. "Study of Impurities Diffusion in Al2O3/GaN/AlxGa1−xN Hetero-structures." Journal of Materials Science: Materials in Electronics 34, no. 5 (2023): 1. https://doi.org/10.1007/s10854-022-09744-y.

MLA (9th ed.) Citation

Laifi, J., et al. "Study of Impurities Diffusion in Al2O3/GaN/AlxGa1−xN Hetero-structures." Journal of Materials Science: Materials in Electronics, vol. 34, no. 5, 2023, p. 1, https://doi.org/10.1007/s10854-022-09744-y.