Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures.
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| Title: | Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures. |
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| Authors: | Laifi, J.1, jlaifi@ju.edu.sa, Bchetnia, A.2, Al-Hweiriny, Asma Abdullah2, Esaahli, Fatma Hfaiedh2 |
| Source: | Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-9, 9p |
| Database: | Applied Science & Technology Source |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 161982046 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Laifi%2C+J%2E%22">Laifi, J.</searchLink><relatesTo>1</relatesTo>, <i>jlaifi@ju.edu.sa</i><br /><searchLink fieldCode="AU" term="%22Bchetnia%2C+A%2E%22">Bchetnia, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Al-Hweiriny%2C+Asma+Abdullah%22">Al-Hweiriny, Asma Abdullah</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Esaahli%2C+Fatma+Hfaiedh%22">Esaahli, Fatma Hfaiedh</searchLink><relatesTo>2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Feb2023, Vol. 34 Issue 5, p1-9, 9p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=161982046 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-022-09744-y Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 1 Titles: – TitleFull: Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Laifi, J. – PersonEntity: Name: NameFull: Bchetnia, A. – PersonEntity: Name: NameFull: Al-Hweiriny, Asma Abdullah – PersonEntity: Name: NameFull: Esaahli, Fatma Hfaiedh IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 02 Text: Feb2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 34 – Type: issue Value: 5 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
| ResultId | 1 |