Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy.
Saved in:
| Title: | Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy. |
|---|---|
| Authors: | Villarreal-Faz, M.1, Meza-Reyes, P. G.1, Belio-Manzano, A.1, Hernández-Gaytán, L. M.1, Mercado-Ornelas, C. A.1, Perea-Parrales, F. E.1, Olvera-Enríquez, J. P.1, Espinosa-Vega, L. I.1, Rodríguez, A. G.1, Yee-Rendón, C. M.2, Méndez-García, V. H.1, Cortes-Mestizo, I. E.3, irving.cortes@uaslp.mx |
| Source: | Journal of Materials Science: Materials in Electronics; Mar2023, Vol. 34 Issue 9, p1-12, 12p |
| Database: | Applied Science & Technology Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
Be the first to leave a comment!
