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Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple Quantum Wells.

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Bibliographic Details
Title: Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple Quantum Wells.
Authors: Hsieh, Tsau-Hua1,2, Huang, Wei-Ta3,4, Hong, Kuo-Bin4, Lee, Tzu-Yi3, Bai, Yi-Hong3, Pai, Yi-Hua3, Tu, Chang-Ching4, Huang, Chun-Hui2, Li, Yiming1, Kuo, Hao-Chung3,4, hckuo0206@nycu.edu.tw
Source: Crystals (2073-4352); Apr2023, Vol. 13 Issue 4, p572, 12p
Database: Applied Science & Technology Source
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ISSN:20734352
DOI:10.3390/cryst13040572