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Investigation of ultrathin yttrium silicide for NMOS source/drain contacts.

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Bibliographic Details
Title: Investigation of ultrathin yttrium silicide for NMOS source/drain contacts.
Authors: Sun, Xianglie1,2, Xu, Jing1,2, xujing@ime.ac.cn, Gao, Jianfeng2, Liu, Jinbiao1,2, He, Yanping1,2, Chen, Xu1,2, Kong, Mengjuan1,2, Li, Yongliang1,2, Li, Junfeng2, Wang, Wenwu1,2, Ye, Tianchun1,2,3, Luo, Jun1,2, luojun@ime.ac.cn
Source: Journal of Materials Science: Materials in Electronics; May2023, Vol. 34 Issue 15, p1-9, 9p
Database: Applied Science & Technology Source
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Description
ISSN:09574522
DOI:10.1007/s10854-023-10660-y