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Investigation of ultrathin yttrium silicide for NMOS source/drain contacts.

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Title: Investigation of ultrathin yttrium silicide for NMOS source/drain contacts.
Authors: Sun, Xianglie1,2, Xu, Jing1,2, xujing@ime.ac.cn, Gao, Jianfeng2, Liu, Jinbiao1,2, He, Yanping1,2, Chen, Xu1,2, Kong, Mengjuan1,2, Li, Yongliang1,2, Li, Junfeng2, Wang, Wenwu1,2, Ye, Tianchun1,2,3, Luo, Jun1,2, luojun@ime.ac.cn
Source: Journal of Materials Science: Materials in Electronics; May2023, Vol. 34 Issue 15, p1-9, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 163960795
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PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Investigation of ultrathin yttrium silicide for NMOS source/drain contacts.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Sun%2C+Xianglie%22">Sun, Xianglie</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Xu%2C+Jing%22">Xu, Jing</searchLink><relatesTo>1,2</relatesTo>, <i>xujing@ime.ac.cn</i><br /><searchLink fieldCode="AU" term="%22Gao%2C+Jianfeng%22">Gao, Jianfeng</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Jinbiao%22">Liu, Jinbiao</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22He%2C+Yanping%22">He, Yanping</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+Xu%22">Chen, Xu</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Kong%2C+Mengjuan%22">Kong, Mengjuan</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Yongliang%22">Li, Yongliang</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Junfeng%22">Li, Junfeng</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Wenwu%22">Wang, Wenwu</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Ye%2C+Tianchun%22">Ye, Tianchun</searchLink><relatesTo>1,2,3</relatesTo><br /><searchLink fieldCode="AU" term="%22Luo%2C+Jun%22">Luo, Jun</searchLink><relatesTo>1,2</relatesTo>, <i>luojun@ime.ac.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; May2023, Vol. 34 Issue 15, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=163960795
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-023-10660-y
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 1
    Titles:
      – TitleFull: Investigation of ultrathin yttrium silicide for NMOS source/drain contacts.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Sun, Xianglie
      – PersonEntity:
          Name:
            NameFull: Xu, Jing
      – PersonEntity:
          Name:
            NameFull: Gao, Jianfeng
      – PersonEntity:
          Name:
            NameFull: Liu, Jinbiao
      – PersonEntity:
          Name:
            NameFull: He, Yanping
      – PersonEntity:
          Name:
            NameFull: Chen, Xu
      – PersonEntity:
          Name:
            NameFull: Kong, Mengjuan
      – PersonEntity:
          Name:
            NameFull: Li, Yongliang
      – PersonEntity:
          Name:
            NameFull: Li, Junfeng
      – PersonEntity:
          Name:
            NameFull: Wang, Wenwu
      – PersonEntity:
          Name:
            NameFull: Ye, Tianchun
      – PersonEntity:
          Name:
            NameFull: Luo, Jun
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 21
              M: 05
              Text: May2023
              Type: published
              Y: 2023
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 34
            – Type: issue
              Value: 15
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1