Temperature sensitive analytical analysis of gate‐stack dual metal nanowire field‐effect transistor (4H‐SiC).
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| Title: | Temperature sensitive analytical analysis of gate‐stack dual metal nanowire field‐effect transistor (4H‐SiC). |
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| Authors: | Neeraj1, s.neerumalik@gmail.com, Sharma, Shobha1, Goel, Anubha2, anubhagoel15@gmail.com, Rewari, Sonam3, Gupta, Radhey Shyam2 |
| Source: | International Journal of Numerical Modelling; Jul2023, Vol. 36 Issue 4, p1-15, 15p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 08943370 |
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| DOI: | 10.1002/jnm.3065 |
